2 C 26.5 medium power amplifier technical data features ? wide-frequency range: 2 - 26.5 ghz ? moderate gain: 7 db ? gain flatness: 1 db ? return loss: input -13 db output -11 db ? low-frequency operation capability: < 2 ghz ? gain control: 30 db dynamic range ? medium power: 20 ghz: p -1db : 22 dbm p sat : 24 dbm 26.5 ghz: p -1db : 19 dbm p sat : 21 dbm description the HMMC-5027 is a broadband gaas mmic traveling wave amplifier designed for medium output power and moderate gain over the full 2 to 26.5 ghz frequency range. seven mesfet cascode stages provide a flat gain response, making the HMMC-5027 an ideal wideband power block. optical lithography is used to produce gate lengths of ? 0.5 mm. the HMMC-5027 incorporates advanced mbe technology, ti-pt-au gate metallization, silicon nitride passivation, and polyimide for scratch protection. chip size: 2980 x 770 m m (117.3 x 30.3 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 75 x 75 m m (2.95 x 2.95 mils), or larger HMMC-5027 absolute maximum ratings [1] symbol parameters/conditions units min. max. v dd positive drain voltage v 8.0 i dd total drain current ma 300 v g1 first gate voltage v -5 0 i g1 first gate current ma -1 +1 v g2 second gate voltage v -2.5 +5 i g2 second gate current ma -25 p dc dc power dissipation watts 2.4 p in cw input power dbm 23 t ch operating channel temp. c +150 t case operating case temp. c -55 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 (for 60 seconds maximum) note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. t a = 25 c except for t ch , t stg , and t max .
2 HMMC-5027 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. i dss saturated drain current ma 200 300 500 (v dd = 8.0 v, v g1 = 0.0 v, v g2 = open circuit) v p first gate pinch-off voltage v -2.2 -1.3 -.5 (v dd = 8.0 v, i dd = 30 ma, v g2 = open circuit) v g2 second gate self-bias voltage v 1.8 (v dd = 8.0 v, v g1 = 0.0 v) (0.27 x v dd ) i dsoff (v g1 ) first gate pinch-off current ma 7 (v dd = 8.0 v, v g1 = -3.5 v, v g2 = open circuit) i dsoff (v g2 ) second gate pinch-off current ma 10 (v dd = 5.0 v, v g1 = 0.0 v, v g2 = -3.5 v) q ch-bs thermal resistance (t backside = 25 c) c/w 28 note: 1. measured in wafer form with t chuck = 25 c. (except q ch-bs .) HMMC-5027 rf specifications [1] , t op = 25 c, v d1 = v d2 = 5 v, v g1 = v g2 = open, z o = 50 w , unless otherwise noted symbol parameters and test conditions units min. typ. max. bw guaranteed bandwidth [2] ghz 2 26.5 s 21 small signal gain db 6 7 d s 21 small signal gain flatness db 0.8 rl in input return loss db -13 -10 rl out output return loss db -11 -10 s 12 reverse isolation db -28 -25 p -1db output power @ 1db gain compression dbm 16.5 19 p sat saturated output power dbm 18.5 21 h 2 second harmonic power level (2 < ? o < 20) dbc -21 -18 [p o (? o ) = 21 dbm or p -1db , whichever is less] h 3 third harmonic power level (2 < ? o < 20) dbc -32 -18 [p o (? o ) = 21 dbm or p -1db , whichever is less] nf noise figure db 11 notes: 1. small-signal data measured in wafer form with t chuck = 25 c. large-signal data measured on individual devices mounted in an hp83040 series modular microcircuit package at t a = 25 c. 2. performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. upper corner frequency ~ 30 ghz.
3 HMMC-5027 applications the HMMC-5027 series of travel- ing wave amplifiers are designed for use as general purpose wideband power stages in communication systems and microwave instrumentation. they are ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 26.5 ghz frequency range. dynamic gain control and low-frequency extension capabilities are designed into these devices. biasing and operation these amplifiers are biased with a single positive drain supply (v dd ) and a single negative gate supply (v g1 ). the recommended bias conditions for the HMMC-5027 are v dd = 8.0v, i dd = 250 ma or i dss , whichever is less. to achieve this drain current level, v g1 is typically biased between 0 v and -0.6 v. no other bias supplies or connections to the device are required for 2 to 26.5 ghz operation. the gate voltage (v g1 ) must be applied prior to the drain voltage (v dd ) during power up and removed after the drain voltage during power down. see figure 3 for assembly information. the auxiliary gate and drain contacts are used only for low- frequency performance extension below ? 1.0 ghz. when used, these contacts must be ac coupled only. (do not attempt to apply bias to these pads.) the second gate (v g2 ) can be used to obtain 30 db (typical) dynamic gain control. for normal operation, no external bias is required on this contact and its self-bias potential is between +1.5 and +2.5 volts. applying an external bias between its open circuit potential and -2.5 volts will adjust the gain while maintaining a good input/output port match. assembly techniques solder die-attach using a fluxless ausu solder preform is the recommended assembly method. gold thermosonic wedge bonding with 0.7 mil diameter au wire is recommended for all bonds. tool force should be 22 1 gram, stage temperature should be 150 2 c, and ultrasonic power and dura- tion should be 64 1 db and 76 8 msec, respectively. the bonding pad and chip backside metallization is gold. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. figure 1. HMMC-5027 schematic. aux. drain drain bias (v dd ) rf input single stage shown first gate bias (v g1 ) second gate bias (v g2 ) rf output aux. gate notes: fet gate periphery in microns. all resistors in ohms. ( ), (or in k-ohms, where indicated) seven identical stages 50 248 248 17k 15k 30k 7.5 5.5 50
4 figure 2. HMMC-5027 bonding pad locations. figure 3. HMMC-5027 assembly diagram. v dd (v dd and aux drain pads) (v g2 pad) (rf input pad) aux. drain rf input 700 70 chip id no. aux. gate v g1 v g2 rf output 770 ( 10 m) 75 285 555 2910 2900 2580 2290 70 (rf output pad) 2980 ( 10 m) 465 220 0 notes: all dimensions in microns. rectangular pad dim: 75 x 75 m. octagonal pad dim: 90 m dia. all other dimensions 5 m (unless otherwise noted). chip thickness: 127 15 m. v dd v g1 out in 1.5 mil dia.gold wire bond to 3 15 nf dc feedthru 4 nh inductor (1.0 mil gold wire bond with length of 200 mils) 0.7 mil dia. gold bond wire (length not important) gold plated shim 3 68 pf capacitor input and output thin film circuit with 3 8 pf dc blocking capacitor 2.0 mil nom. gap 2.0 mil nom. gap trace offset 168 m (6.6 mils) 1.5 mil dia.gold wire bond to 3 15 nf dc feedthru bonding island trace offset 168 m (6.6 mils) note: total offset between rf input and rf output pad is 335 m (13.2 mils).
5 HMMC-5027 typical performance typical scattering parameters [1] , (t chuck = 25 c, v dd = 8.0 v, i dd = 250 ma or i dss , whichever is less, z in = z o = 50 w freq. s 11 s 21 s 12 s 22 ghz db mag ang db mag ang db mag ang db mag ang 2.0 -18.7 0.116 -139.5 -57.7 0.0013 -165.2 8.7 2.717 116.6 -13.0 0.223 173.5 3.0 -20.1 0.099 -159.0 -54.9 0.0018 144.2 8.4 2.635 94.8 -13.0 0.224 150.0 4.0 -21.5 0.084 -175.7 -52.0 0.0025 154.0 8.3 2.612 72.0 -13.5 0.212 127.1 5.0 -24.6 0.059 167.8 -49.9 0.0032 111.3 8.4 2.634 48.2 -14.0 0.200 101.6 6.0 -32.0 0.025 167.4 -48.2 0.0039 91.3 8.6 2.699 23.3 -15.3 0.171 71.7 7.0 -30.8 0.029 -94.8 -46.9 0.0045 74.9 8.8 2.763 -3.5 -16.9 0.143 39.5 8.0 -22.7 0.073 -103.2 -45.5 0.0053 21.0 8.8 2.768 -30.9 -18.4 0.120 -2.2 9.0 -18.9 0.114 -121.5 -45.2 0.0055 10.3 8.8 2.744 -58.9 -21.3 0.086 -46.9 10.0 -17.2 0.137 -142.6 -44.7 0.0058 -15.5 8.5 2.673 -85.9 -18.9 0.114 -90.7 11.0 -17.4 0.135 -163.9 -43.5 0.0067 -33.4 8.3 2.608 -112.5 -17.9 0.127 -129.6 12.0 -19.3 0.108 175.6 -41.5 0.0084 -45.4 8.2 2.564 -138.5 -18.2 0.123 -162.6 13.0 -25.6 0.052 170.3 -40.6 0.0093 -75.8 8.2 2.578 -164.9 -19.3 0.108 163.4 14.0 -27.0 0.045 -113.0 -38.6 0.0118 -95.9 8.3 2.610 167.1 -22.1 0.078 126.5 15.0 -19.2 0.109 -111.0 -37.8 0.0129 -124.7 8.3 2.605 138.4 -31.2 0.028 56.7 16.0 -15.6 0.167 -127.9 -37.1 0.0139 -149.1 8.2 2.574 108.8 -23.5 0.067 -33.3 17.0 -14.3 0.193 -148.4 -36.3 0.0153 -174.5 8.0 2.510 79.7 -18.1 0.124 -80.7 18.0 -14.8 0.182 -166.6 -35.8 0.0163 164.1 7.8 2.444 50.9 -15.2 0.174 -115.2 19.0 -17.1 0.140 -179.3 -34.7 0.0185 141.5 7.7 2.418 22.1 -13.7 0.207 -147.6 20.0 -21.4 0.086 -166.2 -32.9 0.0227 112.6 7.8 2.466 -7.5 -13.9 0.202 177.9 21.0 -18.4 0.121 -129.5 -31.6 0.0262 80.7 8.1 2.527 -39.9 -16.8 0.145 136.7 22.0 -13.8 0.205 -137.2 -30.9 0.0285 42.7 8.0 2.512 -74.0 -25.3 0.054 66.9 23.0 -12.1 0.247 -152.7 -30.6 0.0296 13.3 7.6 2.395 -108.4 -19.8 0.102 -56.2 24.0 -12.3 0.244 -169.8 -30.3 0.0304 -15.5 7.4 2.344 -142.5 -13.7 0.207 -103.5 25.0 -14.7 0.184 -175.8 -29.7 0.0329 -44.9 7.3 2.315 -175.6 -11.3 0.272 -136.7 26.0 -16.7 0.146 -149.3 -28.5 0.0375 -78.1 7.9 2.469 148.1 -11.7 0.259 -171.3 26.5 -14.1 0.197 -141.6 -28.0 0.0399 -98.5 8.0 2.503 126.9 -13.0 0.223 172.3 note: 1. data obtained from on-wafer measurements. 246 10 8141618 12 24 26.5 22 20 frequency (ghz) v dd = 8.0 v, i dd = 250 ma [1] v dd = 8.0 v, i dd = 250 ma [1] figure 4. typical gain and reverse isolation vs. frequency. 10 9 8 7 6 5 4 3 2 1 0 ?0 ?0 ?0 ?0 ?0 ?0 small-signal gain, s 21 (db) reverse isolation, s 12 (db) output return loss,s 22 (db) 246 10 8141618 12 24 26.5 22 20 frequency (ghz) figure 5. typical input and output return loss vs. frequency. ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?0 ?5 ?0 ?5 ?0 ?5 ?0 input return loss, s 11 (db)
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. HMMC-5027 typical performance 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 8.0 v, i dd [ @t a = 25 c] = 250 ma figure 6. typical small-signal gain vs. temperature. 12 11 10 9 8 7 6 5 4 small-signal gain, s 21 (db) t case ?5 c ?5 c 0 c +25 c +55 c +85 c +100 c .012 db/ c .015 db/ c .022 db/ c 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 8.0 v, v gi @ 0.2 v figure 7. typical gain vs. second gate control voltage. 20 10 0 ?0 ?0 ?0 ?0 ?0 small-signal gain, s 21 (db) v g2 = +2.0 v, i dd = 250 ma v g2 = 0.0 v, i dd = 218 ma v g2 = 0.5 v, i dd = 180 ma v g2 = ?.0 v, i dd = 119 ma v g2 = ?.5 v, i dd = 62 ma v g2 = 3.0 v, i dd = 12 ma v g2 = 2.5 v, i dd = 13 ma v g2 = 2.0 v, i dd = 26 ma 246 12 810 161820 14 26.5 24 22 frequency (ghz) v dd = 8.0 v, i dd (q) = 250 ma figure 8. typical 1 db gain compression and saturated output power vs. frequency. 28 26 24 22 20 18 16 14 output power (dbm) p sat p ?db 246 12 810 161820 14 26.5 24 22 fundamental frequency, fo (ghz) v dd = 8.0 v, i dd (q) = 250 ma figure 9. typical second and third harmonic vs. fundamental frequency at p out = +21 dbm. ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 harmonics (dbc) 3rd harmonic 2nd harmonic figure 10. typical noise figure performance. 12 10 8 6 4 2 10 8 6 4 2 noise figure (db) associated gain (db) 246 12 810 161820 14 26.5 24 22 frequency (ghz) nominal bias: v dd = 8.0 v, i dd = 250 ma optimal nf bias: v dd = 6.5 v, i dd = 130 ma note: 1. all data measured on individual devices mounted in an hp83040 series modular microcircuit package @ t a = 25 c (except where noted). www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-5447e (11/99)
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